PART |
Description |
Maker |
CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32 128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32 131072-word x 8-bit High Speed CMOS Static RAM 131072-word x 8-bit High Speed CMOS Static RAM
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Cypress Semiconductor, Corp. SONY
|
TC55V8128BJ-12 TC55V8128BJ-10 |
128K Word x 8 Bit CMOS Static RAM(128K字x 8 CMOS 静RAM) 128K的字× 8位CMOS静态RAM128K的字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
UPD442012AGY-DD12X-MJH UPD442012AGY-BB70X-MJH UPD4 |
2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
UPD442002F9-DD10X-BC2-A UPD442002F9-BC70X-BC2-A UP |
2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
UPD431008LLE-A17 UPD431008LLE-A20 |
x8 SRAM 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT 1m-bit互补128k-word8位快速静态存储器
|
NEC TOKIN, Corp.
|
UPD431000ACZ-70L UPD431000ACZ-70LL UPD431000ACZ-85 |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
|
NEC[NEC]
|
MSM521008 MSM521008-20JS |
128K X 8 STANDARD SRAM, 20 ns, PDSO32 From old datasheet system 131,072-Word x 8-Bit CMOS STATIC RAM
|
OKI ELECTRIC INDUSTRY CO LTD
|
TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
TC55W800FT TC55W800FT-55 TC55W800FT-70 |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Semiconductor
|